1 power transistors 2sC5244, 2sC5244a silicon npn triple diffusion mesa type for horizontal deflection output n features l high breakdown voltage, and high reliability through the use of a glass passivation layer l high-speed switching l wide area of safe operation (aso) n absolute maximum ratings (t c =25?c) parameter collector to base voltage collector to emitter voltage emitter to base voltage peak collector current collector current collector power dissipation junction temperature storage temperature symbol v cbo v ces v ebo i cp i c p c t j t stg ratings 1500 1600 1500 1600 6 20 30 200 3.5 150 C55 to +150 unit v v v a a w ?c ?c 2sC5244 2sC5244a 2sC5244 2sC5244a t c =25 c ta=25 c n electrical characteristics (t c =25?c) parameter collector cutoff current emitter cutoff current forward current transfer ratio collector to emitter saturation voltage base to emitter saturation voltage transition frequency storage time fall time symbol i cbo i ebo h fe v ce(sat) v be(sat) f t t stg t f conditions v cb = 1500v, i e = 0 v cb = 1600v, i e = 0 v eb = 5v, i c = 0 v ce = 5v, i c = 10a i c = 10a, i b = 2.8a i c = 10a, i b = 2.8a v ce = 10v, i c = 0.1a, f = 0.5mhz i c = 12a, i b1 = 2.4a, i b2 = C4.8a, resistance loaded min 5 typ 3 1.5 0.12 max 1 1 50 12 3 1.5 2.5 0.2 unit ma m a v v mhz m s m s 2sC5244 2sC5244a unit: mm 1:base 2:collector 3:emitter topC3l package 20.0 0.5 6.0 10.0 26.0 0.5 20.0 0.5 1.5 2.5 solder dip 10.9 0.5 123 2.0 0.3 3.0 0.3 1.0 0.2 5.0 0.3 3.0 4.0 2.0 5.45 0.3 0.6 0.2 1.5 2.7 0.3 1.5 2.0 f 3.3 0.2 3.0
2 power transistors 2sC5244, 2sC5244a p c ta i c v ce h fe i c v ce(sat) i c v be(sat) i c area of safe operation, horizontal operation aso r th(t) t 0 160 40 120 80 140 20 100 60 0 240 200 160 120 80 40 220 180 140 100 60 20 (1) (3) (2) (1) t c =ta (2) with a 100 100 2mm al heat sink (3) without heat sink (p c =3.0w) ambient temperature ta ( ?c ) collector power dissipation p c ( w ) 012 10 8 26 4 0 16 12 4 10 14 8 2 6 t c =25?c 200ma 600ma 400ma 800ma i b =1000ma collector to emitter voltage v ce ( v ) collector current i c ( a ) 0.01 0.1 1 10 0.1 1 10 100 1000 t c =100?c 25?c ?5?c v ce =5v collector current i c ( a ) forward current transfer ratio h fe 0.1 1 10 100 0.3 3 30 0.01 0.03 0.1 0.3 1 3 10 30 100 i c /i b =3.5 100?c 25?c t c =?5?c collector current i c ( a ) collector to emitter saturation voltage v ce(sat) ( v ) 0.1 1 10 100 0.01 0.1 1 10 100 i c /i b =3.5 t c =?5?c 25?c 100?c collector current i c ( a ) base to emitter saturation voltage v be(sat) ( v ) 0 2000 1600 400 1200 800 0 50 40 30 20 10 f=64khz, t c =25?c area of safe operation for the single pulse load curve due to discharge in the high-voltage rectifier tube during horizontal operation <1ma 2sC5244 2sC5244a collector to emitter voltage v ce ( v ) collector current i c ( a ) 10 ? 10 10 ? 10 ? 10 ? 110 3 10 2 10 4 0.01 0.1 1 10 1000 100 note: r th was measured at ta=25?c and under natural convection (1) p t =10v 0.3a (3w) and without heat sink (2) p t =10v 1.0a (10w) and with a 100 100 2mm al heat sink (1) (2) time t ( s ) thermal resistance r th (t) ( ?c/w )
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